(Nanowerk News) A team of researchers, led by Professor Soo-Hyun Kim in the Graduate School of Semiconductors Materials and Devices Engineering and the Department of Materials Science and Engineering ...

The fabrication of nanoscale devices increasingly relies on techniques that offer atomic‐scale precision, with Atomic Layer Deposition (ALD) and Area-Selective Deposition (ASD) at the forefront. ALD ...

ALD for Ru wiring; vertical nanolasers; hydrogel semiconductors.

Atomic layer deposition (ALD) has emerged as a critical technique for fabricating ultrathin films with atomic-scale precision. In particular, ruthenium thin films are of great interest in the ...

Surface decomposition reactions and growth mechanisms are the key influences on the physicochemical properties of the deposited films. It is therefore essential to fully characterize and understand ...

ALD is based on the sequential use of a gas phase chemical process. The ALD cycle consists of four main steps: (1) pulsing of a precursor A, (2) purging of the reactor to remove excess precursor and ...

The term "ALD" was first used around 2000. This technique achieves atomic layer control and conformal deposition through successive, self-limiting surface reactions. It involves introducing chemical ...

Researchers at UNIST’s Graduate School of Semiconductors Materials and Devices Engineering and Department of Materials Science and Engineering, under the direction of Professor Soo-Hyun Kim, have made ...

SAN JOSE, Calif.--(BUSINESS WIRE)--AVACO, specializing in the manufacture of sputtering (PVD) vacuum deposition equipment and atomic layer deposition (ALD) equipment, today announced the development ...

A research team has made a significant breakthrough in thin film deposition technology. A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the ...

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